UPC3225TB Datasheet, PDF (1/17 Pages) California Eastern Labs – BIPOLAR ANALOG INTEGRATED CIRCUIT

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3225TB
5 V, SILICON GERMANIUM MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF amplifier for DBS
tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
FEATURES
• Wideband response
• Low current
• Medium output power
• High linearity
• Power gain
• Noise Figure
• Supply voltage
• Port impedance
: fu = 2.8 GHz TYP. @ 3 dB bandwidth
: ICC = 24.5 mA TYP.
: PO (sat) = +15.5 dBm TYP. @ f = 0.95GHz
: PO (sat) = +12.5 dBm TYP. @ f = 2.15 GHz
: PO (1dB) = +9.0 dBm TYP. @ f = 0.95 GHz
: PO (1dB) = +7.0 dBm TYP. @ f = 2.15 GHz
: GP = 32.5 dB TYP. @ f = 0.95 GHz
: GP = 33.5 dB TYP. @ f = 2.15 GHz
: NF = 3.7 dB TYP. @ f = 0.95 GHz
: NF = 3.7 dB TYP. @ f = 2.15 GHz
: VCC = 4.5 to 5.5 V
: input/output 50 Ω
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Part Number
µPC3225TB-E3
Order Number
Package
µPC3225TB-E3-A 6-pin super minimold
(Pb-Free) ^Note
Marking
Supplying Form
C3M
Embossed tape 8 mm wide.
1, 2, 3 pins face the perforation side of the tape.
Qty 3 kpcs/reel.
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, please contact your nearby sales office
Part number for sample order: µPC3225TB.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10500EJ01V0DS (1st edition)
Date Published December 2004 CP(K)
Printed in Japan
 NEC Compound Semiconductor Devices, Ltd. 2004