UPC2776TB_1 Datasheet, PDF (1/16 Pages) NEC – 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC2776TB
5 V, SUPER MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION
The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has
impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band.
This IC is manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
: VCC = 4.5 to 5.5 V
• Circuit current
: ICC = 25 mA TYP. @VCC = 5.0 V
• Power gain
: GP = 23 dB TYP. @f = 1 GHz
• Medium output power
: PO(1 dB) = +6.5 dBm @f = 1 GHz
• Upper limit operating frequency : fu = 2.7 GHz TYP. @3 dB bandwidth
• Port impedance
: input/output 50 Ω
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
Part Number
µPC2776TB-E3
Package
6-pin super minimold
Marking
C2L
Supplying Form
• Embossed tape 8 mm wide
• 1, 2, 3 pins face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: µPC2776TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12680EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
The mark shows major revised points.
©
Printed in Japan
1997, 2001