UPC2776 Datasheet, PDF (1/3 Pages) NEC – 2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER

PRELIMINARY DATA SHEET
2.7 GHz SILICON MIMIC
WIDE BAND AMPLIFIER
UPC2776T
FEATURES
• WIDE FREQUENCY RESPONSE: 2.7 GHz
• FLAT GAIN RESPONSE: ±1.0 dB
• HIGH GAIN: 23 dB
• MEDIUM OUTPUT POWER: P1dB: 6.0 dBm @ 1.0 GHz
• 5 V SINGLE SUPPLY VOLTAGE
• SMALL SURFACE MOUNT PACKAGE : T06
• TAPE AND REEL PACKAGING AVAILABLE
DESCRIPTION AND APPLICATIONS
The UPC2776T is a Silicon Monolithic integrated circuit
manufactured using the NESAT III process. This device is
suitable for wide band IF blocks due to its high gain and flat
response. The UPC2776T is designed as a low cost IC gain
stage in DBS, TVRO, PCS, WLAN and other communication
receivers.
GAIN vs. FREQUENCY
30
25
20
15
10
0
0.5
1.0 1.5
2.0 2.5 3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = 25 °C, ZIN = ZOUT = 50 Ω)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICC
Circuit Current (no signal)
mA
18
Gs
Small Signal Gain, f = 1 GHz
dB
21
fU
Upper Limit Operating Frequency
GHz
2.3
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
∆GS
P1dB
NF
Gain Flatness, f = 0.1 ~ 2.0 GHz
Output Power at 1 dB Compression f = 1 GHz
Noise Figure, f = 1 GHz
dB
dBm
+4
dB
RLIN
RLOUT
ISOL
PSAT
IM3
RTH
Input Return Loss, f = 1 GHz
dB
4.5
Output return Loss, f = 1 GHz
dB
15
Isolation, f = 1 GHz
dB
27
Saturated Output Power, f = 1 GHz
dBm
3rd Order Intermodulation Distortion, f = 1 GHz
dBc
PO = 0 dBm each tone, f1 = 1000 MHz, f2 = 1002 MHz
Thermal Resistance (Junction to Ambient)
°C/W
UPC2776T
TO6
TYP
25
23
2.7
±1.0
+6.0
6.0
7.5
20
32
8.5
-30
MAX
33
26
7.5
200
California Eastern Laboratories