UPC2726T_00 Datasheet, PDF (1/4 Pages) NEC – 1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON

1.6 GHz DIFFERENTIAL
WIDEBAND SILICON _UPC2726T
RFIC AMPLIFIER
FEATURES
• HIGH GAIN: 15 dB Typical at 400 MHz
• WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP
• SINGLE POSITIVE DC SUPPLY
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is
manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This amplifier was designed as a buffer amplifier for circuits
requiring differential inputs and outputs for increased common-
mode rejection.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
20
GP
VCC = 5.0 V
3.0 V
10
2.0 V
0
9
7
NF
VCC = 2.0 V
5
VCC = 4.5--5.5 V
3
0.1
20
0.3
1.0
Frequency, f (GHz)
1
2.0 3.0
GAIN vs. FREQUENCY
AND TEMPERATURE
-40°C
15
25°C
10
85°C
VCC = 5.0 V
5
0.1
0.3
1.0
Frequency, f (GHz)
2.0 3.0
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, f = 400 MHz)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
UPC2726T
VCC = 5 V
MIN
TYP MAX
VCC = 2 V
MIN TYP MAX
ICC
Circuit Current, (No Signal)
mA
8
11.5
15
2.5
GS
Small Signal Gain
dB
11
15
17
4.5
NF
Noise Figure
dB
4.5
6
5.1
fu
Upper limit Operating Frequency¹
GHz
1.0
1.6
2.4
PSAT Saturated Output Power
dBm
-5
-2
-14
RLIN Input Return Loss
dB
2
1
RLOUT Output Return Loss
dB
4
4
ISOL Isolation
dB
60
58
OIP3 Output 3rd Order Intercept Point²
dBm
-2.5
-10
Notes:
1. The Gain at fu is 3 dB down from the gain at 400 MHz.
2. f1 = 400 MHz, f2 = 402 MHz, single side band.
California Eastern Laboratories