UPC2726T Datasheet, PDF (1/12 Pages) NEC – 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

DATA SHEET
BIPOLAR NALOG NTEGRATED IRCUIT
µPC2726T
1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
DESCRIPTION
The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.
This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement
equipment applications. This IC can also use as differential oscillator application.
The µPC27×× series is manufactured using NEC’s 20 GHz fT NESAT^TM III silicon bipolar process. This process
uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from
external pollution and prevent corrosion and migration. Thus, this process can produce the ICs with excellent
performance, uniformity and reliability.
FEATURES
• Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V
• Power gain − GP = 15 dB @ 5 V
• Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA
• 6 pin mini mold for high-density surface mounting.
ORDERING INFORMATION
PART NUMBER
µPC2726T-E3
PACKAGE
6 pin mini mold
SUPPLYING FORM
Embossed tape 8 mm wide. 3 kp/reel.
Pin 1, 2, 3 face to perforation side of the tape.
* For evaluation sample order, please contact your local NEC sales office. (Part number: µPC2726T)
EQUIVALENT CIRCUIT
PIN CONNECTIONS
RF OUT <4>
RF IN <6>
<5> VCC
<3> RF OUT ₃
<1> RF IN
2
1
<2> GND
(Top View)
(Bottom View)
4
4
3
5
1. INPUT
2. GND
5
2
3. OUTPUT
6
4. OUTPUT ₆
1
5. VCC
6. INPUT
Document No. P10873EJ2V0DS00 (2nd edition)
(Previous No. IC-3125)
Date Published March 1997 N
Printed in Japan
Caution: Electro-static sensitive device
©
1994