UPC2714T Datasheet, PDF (1/6 Pages) NEC – 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

LOW POWER CONSUMPTION _UPC2714T
SILICON MMIC AMPLIFIER _UPC2715T
FEATURES
• LOW POWER CONSUMPTION:
15 mW (VCC = 3.4 V, ICC = 4.5 mA)
• HIGH POWER GAIN: 20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
2 GHz (UPC2714T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2714T and UPC2715T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require low
power consumption and wide frequency operation. They are
designed for low cost, low power consumption gain stages in
cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY
20
UPC2715
15
10
5
0
0
UPC2714
0.5
1.0
1.5
2.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 0.5 GHz, VCC = 3.4 V)
PART NUMBER
PACKAGE OUTLINE
UPC2714T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
TYP
MAX
ICC
GS
fU
∆GS
PSAT
NF
RLIN
RLOUT
ISOL
∆GT
RTH
Circuit Current
Small Signal Gain
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1~ 0.6 GHz
Saturated Output Power
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
mA
dB
GHz
dB
dBm
dB
dB
dB
dB
dB/°C
°C/W
3.3
4.5
5.7
8.5
11.5
15.5
1.4
1.8
±1.0
-10
-7
5.0
6.5
10
13
5
8
22
27
+0.006
200
UPC2715T
T06
MIN
TYP MAX
3.3
4.5
5.7
16
19
23
0.9
1.2
±1.0
-9
-6
4.5
6.0
12
17
5
8
28
33
+0.006
200
California Eastern Laboratories