UPC2713T Datasheet, PDF (1/5 Pages) NEC – 1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

1.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
UPC2713T
FEATURES
• FREQUENCY RESPONSE: 1.5 GHz
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
35
30
25
DESCRIPTION
The UPC2713T is a Silicon Monolithic integrated circuit manu-
factured using the NESAT III process. This device is suitable
for applications which require high gain and wide-band opera-
tion. It is designed for low cost gain stages in cellular radios,
GPS receivers, DBS tuners, PCN, and test/measurement
equipment.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
20
0
0.5
1.0
1.5
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICC
Circuit Current (no signal)
mA
GS
Small Signal Gain
dB
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
∆GS
Gain Flatness, f = 0.1∼0.8 GHz
PSAT
Saturated Output Power
dBm
P1dB
Output Power at 1dB Compression Point
dBm
NF
Noise Figure
dB
RLIN
Input Return Loss
dB
RLOUT Output Return Loss
dB
ISOL
Isolation
dB
∆GT
Gain -Temperature Coefficient
dB/°C
RTH
Thermal Resistance (Junction to Ambient)
°C/W
UPC2713T
T06
MIN
TYP
MAX
9
12
15
26
29
33
0.9
1.2
±0.8
4
7
-4
3.2
4.5
10
13
6
9
35
40
-0.016
200
California Eastern Laboratories