UPC2711TB Datasheet, PDF (1/9 Pages) NEC – 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER

5 V, SUPER MINIMOLD ^UPC2711TB
SILICON MMIC WIDEBAND AMPLIFIER ^UPC2712TB
FEATURES
• HIGH DENSITY SURFACE MOUNTING:
6 pin super minimold or SOT- 363 package
• SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
• WIDEBAND RESPONSE:
UPC2711TB: fu = 2.9 GHz TYP
UPC2712TB: fu = 2.6 GHz TYP
• POWER GAIN:
UPC2711TB: GP = 13 dB TYP
UPC2712TB: GP = 20 dB TYP
DESCRIPTION
The UPC2711TB and UPC2712TB are Silicon MMIC Wideband
Amplifiers manufactured using NEC's 20 GHz f NESAT^TM III
T
silicon bipolar process. These devices are designed for use as
buffer amps in DBS tuners. The UPC2711/12TB are pin
compatible and have comparable performance as the larger
UPC2711/12T, so they are suitable for use as a replacement
to help reduce system size. These IC's are housed in a 6 pin
super minimold or SOT-363 package.
NEC's stringent quality assurance and test procedure ensure
the highest reliability and performance.
TYPICAL PERFORMANCE CURVES
GAIN vs. FREQUENCY
25
UPC2712TB
20
15
UPC2711TB
10
5
0.5
1.0
1.5
2.0 2.5
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5.0 V, ZL = ZS = 50 Ω)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
UPC2711TB
S06
MIN
TYP MAX
ICC
GP
fU
∆GP
PO(SAT)
NF
RLIN
Circuit Current (no signal)
Power Gain, f = 1 GHz
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 100 MHz)
Gain Flatness, f = 0.1 GHz to 2.5 GHz
Maximum Output Level, f = 1 GHz, PIN = 0 dBm
Noise Figure, f = 1 GHz
Input Return Loss, f = 1 GHz
mA
dB
GHz
dB
dBm
dB
dB
9
12
15
11
13
16.5
2.7
2.9
±0.8
-2
+1
5
6.5
20
25
RLOUT
ISOL
Output Return Loss, f = 1 GHz
Isolation, f = 1 GHz
dB
9
12
dB
25
30
UPC2712TB
S06
MIN TYP MAX
9
12
15
18
20
23.5
2.2 2.6
±0.8
0
+3
4.5
6
9
12
10
13
28
33
California Eastern Laboratories