UPC2710T Datasheet, PDF (1/6 Pages) NEC – 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

1.5 GHz SILICON MMIC _UPC2710T
WIDE-BAND AMPLIFIER _UPC2713T
FEATURES
• FREQUENCY RESPONSE: 1.5 GHz
• HIGH GAIN: 33 dB (UPC2710T)
• SATURATED OUTPUT POWER:
+13.5 (UPC2710T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
DESCRIPTION
The UPC2710T and UPC2713T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable for applications which require high
gain and wide-band operation. They are designed for low cost
gain stages in cellular radios, GPS receivers, DBS tuners,
PCN, and test/measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25 °C, f = 0.5 GHz, VCC = 5 V)
PART NUMBER
PACKAGE OUTLINE
UPC2710T
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN TYP MAX
ICC
Circuit Current (no signal)
mA
16
22
29
GS
Small Signal Gain
dB
30
33
36.5
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
∆GS
Gain Flatness, f = 0.1 ~ 0.6 GHz
f = 0.1∼ 0.8 GHz
GHz
dB
0.7
1.0
±0.8
PSAT
Saturated Output Power
dBm
11
13.5
P1dB
Output Power at 1dB Compression Point
dBm
7.5
NF
Noise Figure
dB
3.5
5
RLIN
Input Return Loss
dB
3
6
RLOUT Output Return Loss
dB
9
12
ISOL
Isolation
dB
34
39
∆GT
Gain -Temperature Coefficient
RTH
Thermal Resistance (Junction to Ambient)
dB/°C
°C/W
-0.006
200
UPC2713T
T06
MIN TYP MAX
9
12
15
26
29
33
0.9 1.2
±0.8
4
7
-4
3.2
4.5
10
13
6
9
35
40
-0.016
200
California Eastern Laboratories