UPC2709T Datasheet, PDF (1/6 Pages) NEC – 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER

2.5 GHz SILICON MMIC UPC2709T
WIDE-BAND AMPLIFIER UPC2712T
FEATURES
• WIDE FREQUENCY RESPONSE: 2.5 GHz
• HIGH GAIN: 23 dB (UPC2709T)
• SATURATED OUTPUT POWER:
+11.5 dBm (UPC2709T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2709T and UPC2712T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY
30
25
20
UPC2712
15
UPC2709
10
0
0.5 1.0 1.5 2.0
2.5 3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 1 GHz, VCC = 5 V)
SYMBOLS
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
ICC
GS
fU
∆GS
PSAT
P1dB
NF
RLIN
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
Gain Flatness, f = 0.1 ~ 1.8 GHz
f = 0.1 ~ 2.0 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
mA
dB
GHz
dB
dBm
dBm
dB
dB
RLOUT
ISOL
∆GT
RTH
Output Return Loss
Isolation
Gain -Temperature Coefficient
Thermal Resistance (Junction to Ambient)
dB
dB
dB/°C
°C/W
UPC2709T
T06
MIN
TYP MAX
19
25
32
21
23
26.5
2.0
2.3
±1.0
9
11.5
7.5
5
6.5
7
10
7
10
26
31
-0.002
200
UPC2712T
T06
MIN TYP MAX
9
12
15
18
20
23.5
2.2 2.6
±0.8
0
3
-2.5
4.5
6
9
12
10
13
28
33
-0.003
200
California Eastern Laboratories