UPC1679G Datasheet, PDF (1/12 Pages) NEC – 5 V-BIAS, +5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1679G
5 V-BIAS, +15.5 dBm OUTPUT, 1.8 GHz WIDEBAND
Si MMIC AMPLIFIER
DESCRIPTION
The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high
frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter
stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP.
This IC is manufactured using NEC’s 20 GHz fT NESAT^TMIV silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Saturated output power
• Wideband response
• Isolation
• Power Gain
: VCC = 4.5 to 5.5 V
: PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor
: fu = 1.8 GHz TYP. @ 3 dB bandwidth
: ISL = 34 dB TYP. @ f = 500 MHz
: GP = 21.5 dB TYP. @ f = 500 MHz
ORDERING INFORMATION
Part Number
µPC1679G-E1
µPC1679G-E2
Package
8-pin plastic SOP (225 mil)
Marking
1679
Supplying Form
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Embossed tape 12 mm wide.
1 pin is tape roll-in direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1679G)
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12434EJ4V0DS00 (4th edition)
Date Published September 1999 N CP(K)
The mark shows major revision points.
Printed in Japan
©
1994, 1999