UPC1676P Datasheet, PDF (1/8 Pages) NEC – GENERAL PURPOSE WIDE BNAD AMPLIFIER

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1676G
GENERAL PURPOSE WIDE BNAD AMPLIFIER
DESCRIPTION
The µPC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed
for use as a wide band amplifier covers from HF band to UHF band.
FEATURES
• Excellent frequency response : 1.2 GHz TYP.
@ 3 dB down below flat gain.
• High power gain : 22 dB TYP. @ f = 0.5 GHz.
• High isolation.
• Super small package.
• Uni- and low voltage operation : VCC = 5 V
• Input and output matching 50 Ω.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage
VCC
6
V
Total Power Dissipation
PT
200
mW
Operating Temperature
Topt
−40 to +85 °C
Storage Temperature
Tstg
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
Circuit Current
ICC
14
19
24
Power Gain
GP
19
22
24
Noise Figure
NF
4.5
6.0
Upper Limit Operating Frequency
fu
1.0
1.2
Isolation
ISL
24
28
Input Return Loss
RLin
9
12
Output Return Loss
RLout
6
9
Maximum Output Level
PO
3
5
UNIT
TEST CONDITIONS
mA No Signal
dB f = 0.5 GHz
dB f = 0.5 GHz
GHz 3 dB down below flat gain
dB f = 0.5 GHz
dB f = 0.5 GHz
dB f = 0.5 GHz
dBm f = 0.5 GHz, Pin = 0 dBm
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
Document No. P12447EJ2V0DS00 (2nd edition)
(Previous No. IC-1891)
Date Published March 1997 N
Printed in Japan
©
1989