UPC1658G Datasheet, PDF (1/12 Pages) NEC – LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1658G
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
DESCRIPTION
The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system
applications. Bandwidth and output power level can be determined according to external resistor constants of
negative feedback and final stage collector. This IC is available in 8-pin plastic SOP.
This IC is manufactured using NEC’s 10 GHz fT NESAT^TM II silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low noise figure
: NF ≤ 3 dB
• Due to the external negative feedback circuit, the power gain can be adjustable by selecting appropriate
resistance constants.
: GP ≥ 40 dB @ Without negative feedback resistor
: GP ≥ 18 dB @ With negative feedback resistor
• Wideband response
: f3dB = 1.0 GHz @ GP = 18 dB
• External resistor can vary the collector current of the final transistor in the IC to adjust the saturated output level.
APPLICATIONS
• IF buffer amplifier of high frequency system
• Measurement equipment
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
µPC1658G-E1
8-pin plastic SOP (225 mil)
1658
Embossed tape 12 mm wide.
1 pin is tape pull-out direction.
Qty 2.5 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC1658G)
Caution TO-99 CAN package (µPC1658A) and 8-pin plastic DIP package (µPC1658C) products are
discontinued.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P11120EJ3V0DS00 (3rd edition)
The mark shows major revised points.
©
Date Published September 1999 N CP(K)
Printed in Japan
1996, 1999