UPC1652G Datasheet, PDF (1/8 Pages) NEC – SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER

DDAATTAA SSHHEEEETT
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1652G
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
WIDE BAND AMPLIFIER
DESCRIPTION
The µPC1652G is a silicon monolithic integrated circuit
especially designed as a wide band amplifier convering HF band
through UHF band.
FEATURES
• Excellent frequency response : 1 200 MHz TYP. @ 3 dB down
• High power gain : 18 dB TYP. @ f = 500 MHz
• Low voltage operation : VCC = 5 V
• SOP package
PIN CONNECTIONS
INPUT 1
GND 2
GND 3
GND 4
8 GND
7 VCC
6 VCC
5 OUTPUT
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Supply Voltage
VCC
7
V
Total Power dissipation
PD
440
mW
Operating Ambient Temperature TA
−20 to +75
°C
Storage Temperature
Tstg −40 to +125 °C
EQUIVALENT CIRCUIT
VCC
ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5 V)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Circuit Current
ICC 15 20 25 mA No signals
Power Gain
GP 16 18 20 dB f = 500 MHz
Noise Figure
NF
5.5 6.5 dB f = 500 MHz
OUT
Band Width
BW 1000 1200
MHz 3 dB down below flat gain
Isolation
ISO
23 26
dB f = 500 MHz
IN
Input Return Loss
S11 17 20
dB f = 500 MHz
Output Return Loss
S22 12 15
dB f = 500 MHz
Maximum Output Level
PO
35
dBm f = 500 MHz
GND
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confirm that this is the latest version.
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Document No. P12443EJ5V0DS00 (5th edition)
The mark shows major revised points.
Date Published November 1999 N CP(K)
Printed in Japan
©
1983, 1999