UPA901TU Datasheet, PDF (1/9 Pages) NEC – NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

DATA SHEET
NEC's NPN SiGe RF IC
IN A 8-PIN LEAD-LESS MINIMOLD
UPA901TU
FEATURES
• OUTPUT POWER:
Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
• LOW POWER:
IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
• SINGLE POWER SUPPLY OPERATION:
VCE = 3.6 V
• BUILT-IN BIAS CIRCUIT
• 8-PIN LEAD-LESS MINIMOLD:
(2.0 × 2.2 × 0.5 mm)
DESCRIPTION
NEC's UPA901TU is a silicon germanium HBT IC designed
for the power amplifier of 5.8 GHz cordless phone and other
5.8 GHz applications. This IC consists of two stage amplifiers
and has excellent performance, high efficiency, high gain,
low power consumption.
NEC's UPA901TU is packaged in surface mount 8-pin lead-
less minimold plastic package.
This device is fabricated with our SiGe HBT process UHS2-
HV technology.
APPLICATIONS
• 5.8 GHz Cordless Phones
• 5.8 GHz Band DSRC (Dedicated Short Range
Communication) System
• 5 GHz Band Video Transmitter
ORDERING INFORMATION
PART NUMBER
UPA901TU
UPA901TU-T3
ORDER NUMBER
UPA901TU-A
UPA901TU-T3-A
QUANTITY
50 pcs (Non reel)
5 kpcs/reel
PACKAGE
8-pin lead-less
minimold( Pb-Free)
MARKING
SUPPLYING FORM
A901 • 8 mm wide embossed taping
• Pin 1, Pin 8 face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
California Eastern Laboratories