UPA895TD Datasheet, PDF (1/10 Pages) NEC – NPN SILICON RF TWIN TRANSISTOR

NEC's NPN SILICON RF
TWIN TRANSISTOR
UPA895TD
FEATURES
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO LOW NOISE OSCILLATOR TRANSISTORS:
NE851
• IDEAL FOR 1-3 GHz OSCILLATORS
DESCRIPTION
NEC's UPA895TD contains two NE851 high frequency silicon
bipolar chips. The NE851 is an excellent oscillator chip, featur-
ing low 1/f noise and high immunity to pushing effects. NEC's
new ultra small TD package is ideal for all portable wireless
applications where reducing board space is a prime consider-
ation. Each transistor chip is independently mounted and
easily configured for oscillator/buffer amplifier and other
applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8 ^+0.07
-0.05
(Top View)
C1 ₁ Q1
6 ^B1
E1 ₂
5 ^E2
C2 ₃ Q2
4 ^B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ORDERING INFORMATION
PART NUMBER
UPA895TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA895TD
TD
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
nA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain¹ at VCE = 3 V, IC = 7 mA
nA
100
fT
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
GHz
5.0
Cre
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz
dB
3.0
|S21|S21E|^2E|² Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz
dB
4.5
TYP
120
6.5
0.6
4.0
5.5
MAX
600
600
145
0.8
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
1.9
2.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories