UPA862TD Datasheet, PDF (1/11 Pages) NEC – NECs NPN SILICON RF TWIN TRANSISTOR

NEC's NPN SILICON RF
TWIN TRANSISTOR
UPA862TD
FEATURES
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR 1-2 GHz OSCILLATORS
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN
high frequency silicon bipolar chip. The NE851 is an excellent
oscillator chip, featuring low 1/f noise and high immunity to
pushing effects. The NE685 is an excellent buffer transistor,
featuring low noise and high gain. NEC's new ultra small TD
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8 ^+0.07
-0.05
(Top View)
C1 ₁ Q1
6 ^B1
E1 ₂
5 ^E2
C2 ₃ Q2
4 ^B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
ICBO
IEBO
hFE
fT
Cre
|S21E|²
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain¹ at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain¹ at VCE = 3 V, IC = 7 mA
fT
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Cre
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
|S21E|² Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz
|S21|S21E|^2E|² Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
UNITS
nA
nA
GHz
pF
dB
dB
nA
nA
GHz
pF
dB
dB
dB
UPA862TD
TD
MIN
TYP
75
110
10
12
0.4
7
8.5
1.5
100
120
5.0
6.5
0.6
3.0
4.0
4.5
5.5
1.9
MAX
100
100
150
0.7
2.5
600
600
145
0.8
2.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories