UPA837TF Datasheet, PDF (1/2 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL
TWIN TRANSISTOR
UPA837TF
FEATURES
OUTLINE DIMENSIONS (Units in mm)
• SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
• LOW HEIGHT PROFILE:
Just 0.60 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
DESCRIPTION
The UPA837TF contains one NE686 and one NE688 NPN high
frequency silicon bipolar chip. NEC's new low profile TF
package is ideal for all portable wireless applications where
reducing component height is a prime consideration. Each
transistor chip is independently mounted and easily configured
for oscillator/buffer amplifier and other applications.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Package Outline TS06
2.1 ± 0.1
1.25 ± 0.1
Q1
1
0.65
2.0 ± 0.2
1.3
2
Q2
3
6
+0.10
0.22 _{- 0.05}
5 (All Leads)
4
0.6 ± 0.1
0.45
PIN CONNECTIONS
0 ~ 0.1
1. Collector (Q1) 4. Base (Q2)
2. Emitter (Q1) 5. Emitter (Q2)
3. Collector (Q2) 6. Base (Q1)
0.13 ± 0.05
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
PART NUMBER
PACKAGE OUTLINE
UPA837TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
0.1
hFE
DC Current Gain¹ at VCE = 2 V, IC = 7 mA
70
140
fT
Gain Bandwidth (1) at VCE = 2 V, IC = 7 mA, f = 2 GHz
GHz
10
13
fT
Gain Bandwidth (2) at VCE = 1 V, IC = 5 mA, f = 2 GHz
GHz
8.5
12
Cre
Feedback Capacitance² at VCB = 2 V, IE = 0, f = 1 MHz
pF
0.4
0.6
|S21E|² Insertion Power Gain (1) at VCE = 2 V, IC =7 mA, f = 2 GHz
dB
7.5
9
|S21E|² Insertion Power Gain (2) at VCE = 1 V, IC =5 mA, f = 2 GHz
dB
7
8.5
NF
Noise Figure (1) at VCE = 2 V, IC = 3 mA, f = 2 GHz
dB
1.5
2
NF
Noise Figure (2) at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.5
2
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE
DC Current Gain¹ at VCE = 1 V, IC = 3 mA
100
fT
Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
4.0
fT
Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
Cre
Feedback Capacitance² at VCB = 1 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz
dB
2.5
|S21E|² Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz
dB
4.5
9.0
0.75
3.5
6.5
0.1
0.1
145
0.85
NF
Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.7
2.5
NF
Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories