UPA836TF Datasheet, PDF (1/11 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF
FEATURES
• LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
• HIGH GAIN:
Q1: |S21E|² = 8.5 dB TYP at f = 2 GHz, VCE = 3 V,
lc = 10 mA
Q2: |S21E|² = 3.5 dB TYP at f = 2 GHz, VCE = 1 V,
lc = 3 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE685, Q2: NE688)
DESCRIPTION
The UPA836TF has two different built-in transistors for low cost
amplifier and oscillator applications up to L and S band. Low
noise figures, high gain, high current capability, and medium
output give this device high dynamic range and excellent
linearity for two-stage amplifiers. This device is also ideally
suited for use in a VCO/buffer amplifier application. The
thinner package style allows for higher density designs.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06 (Top View)
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.22
+0.10
- 0.05
5 (All Leads)
4
0.6 ± 0.1
0.45
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.13 ± 0.05
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA836TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE
DC Current Gain¹ at VCE = 3 V, IC = 10 mA
75
fT
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
Cre
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz
dB
7
NF
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
dB
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE
DC Current Gain¹ at VCE = 1 V, IC = 3 mA
100
fT
Gain Bandwidth (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
4.0
fT
Gain Bandwidth (2) at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
Cre
Feedback Capacitance² at VCB = 1 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain (1) at VCE = 1 V, IC =3 mA, f = 2 GHz
dB
2.5
|S21E|² Insertion Power Gain (2) at VCE = 3 V, IC =20 mA, f = 2 GHz
dB
TYP
12
0.4
8.5
1.5
4.5
9.0
0.75
3.5
6.5
MAX
0.1
0.1
150
0.7
2.5
0.1
0.1
145
0.85
NF
Noise Figure (1) at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.7
2.5
NF
Noise Figure (2) at VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.5
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories