UPA832TF Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

PRELIMINARY DATA SHEET
Silicon Transistor
µPA832TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
DESCRIPTION
The µPA832TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
• Low noise
Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA
• High gain
Q1 : |S21e|² = 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
Q2 : |S21e|² = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC4226, 2SC4959)
ON-CHIP TRANSISTORS
3-pin small mini mold part No.
Q1
2SC4226
Q2
2SC4959
The µPA835TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER
µPA832TF
µPA832TF-T1
QUANTITY
PACKING STYLE
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
B1 E2 B2
6
54
Q1
Q2
1
2
3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12724EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
©
1997