UPA828TF Datasheet, PDF (1/20 Pages) NEC – HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
PPA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 6-pin thin-type small mini mold package adopted
• Built-in 2 transistors (2 u 2SC5184)
ORDERING INFORMATION
Part Number
PPA828TF
PPA828TF-T1
Quantity
Packing Style
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2
Emitter), Pin 4 (Q2 Base) face to
perforation side of the tape.
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1
1.25±0.1
Remark If you require an evaluation sample, please contact
an NEC Sales Representative (Unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = 25qC)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90 in 1 element
mW
180 in 2 elements
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
ð65 to +150
°C
PIN CONFIGURATION (Top View)
B1 E2 B2
6
54
Q1
Q2
1
2
3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
The information in this document is subject to change without notice.
Document No. P12693EJ1V0DS00 (1st edition)
Date Published July 1997 N
©
Printed in Japan
1997