UPA826TC Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA826TC
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2 × 2SC5010)
FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low noise and high gain
• Operable at low voltage
• Small feedback capacitance: Cre = 0.4 pF TYP.
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 transistors (2 × 2SC5010)
ORDERING INFORMATION
Part Number
Package
µPA826TC
µPA826TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA826TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
Total Power Dissipation
IC
30
mA
P Note
T
180 in 1 element
mW
230 in 2 elements
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to 150
°C
Note Mounted on 1.08 cm² × 1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999