UPA822TF Datasheet, PDF (1/1 Pages) NEC – NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH
FREQUENCY TRANSISTOR
UPA822TF
FEATURES
• SMALL PACKAGE OUTLINE:
SOT-363 package measures just 2.0 mm x 1.25 mm
• LOW HEIGHT PROFILE:
Just 0.60 mm high
• HIGH COLLECTOR CURRENT:
IC MAX = 65 mA
DESCRIPTION
The UPA822TF contains two NE681 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applications where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
ABSOLUTE MAXIMUM RATINGS¹ (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
10
VEBO Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
65
PT
TJ
TSTG
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
mW
110
mW
200
°C
150
°C
-65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE TS06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
Q1
1
0.65
2.0 ± 0.2
1.3
2
Q2
3
6
0.22
+0.10
- 0.05
5 (All Leads)
4
0.6 ± 0.1
0.45
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0 ~ 0.1
0.13 ± 0.05
Note: Pin 1 is the
lower left most pin as
the package lettering
is oriented and read
left to right.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA822TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE
Forward Current Gain¹ at VCE = 3 V, IC = 7 mA
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
4.5
7.0
Cre
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|² Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
10
12
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
1.4
hFE1/hFE2
hFE Ratio: _{hFE1 = Smaller Value of Q1, or Q2}
hFE2 = Larger Value of Q1 or Q2
0.85
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA822TF-T1, 3K per reel.
MAX
0.8
0.8
240
0.9
1.7
California Eastern Laboratories
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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