UPA821TF Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TWIN TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL _UPA821TF
TWIN TRANSISTOR
FEATURES
• LOW NOISE:
NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
|S21E|² = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• SMALL PACKAGE STYLE:
2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package
OUTLINE DIMENSIONS (Units in mm)
Package Outline TS06
2.1 ± 0.1
1.25 ± 0.1
1
0.65
2.0 ± 0.2
1.3
2
3
6
0.22
+0.10
- 0.05
5 (All Leads)
4
DESCRIPTION
The UPA821TF has two built-in low-voltage transistors which
are designed for low-noise amplification in the VHF to UHF
band. The two die are chosen from adjacent locations on the
wafer. These features combined with the pin configuration
make this device ideal for balanced or mirrored applications.
Low noise figures, high gain, and high current capability equate
to wide dynamic range and excellent linearity. The thinner
package style allows for higher density designs.
0.6 ± 0.1
0.45
0 ~ 0.1
PIN CONFIGURATION (Top View)
B1
E2
B2
0.13 ± 0.05
6
5
4
Q1
Q2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
C1
E1
C2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Note: Pin 3 is identified with a circle on the bottom of the package.
PART NUMBER
PACKAGE OUTLINE
UPA821TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE
DC Current Gain¹ at VCE = 3 V, IC = 7 mA
µA
70
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA
GHz
3.0
Cre
Feedback Capacitance² at VCB = 3 V, IE = 0, f = 1 MHz
pF
|S21E|²
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
dB
7
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
TYP
4.5
0.7
9
1.2
MAX
1.0
1.0
140
1.5
2.5
hFE1/hFE2
hFE ratio, VCE = 3 V, Ic = 7 mA
hFE1 = Smaller hFE value between Q1 and Q2
hFE2 = Larger hFE value between Q1 and Q2
0.85
1.0
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitance meter.
California Eastern Laboratories