UPA812T Datasheet, PDF (1/6 Pages) NEC – HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA812T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD
The µPA812T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
|S21e|² = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• A Small Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4227)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
µPA812T
Loose products
(50 PCS)
µPA812T-T1 Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
20
10
1.5
65
150 in 1 element
200 in 2 elements^Note
150
–65 to +150
Note 110 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
6
5
Q1
1
2
4
Q2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Base (Q2)
5. Emitter (Q1)
3. Collector (Q2) 6. Base (Q1)
The information in this document is subject to change without notice.
Document No. P11465EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1995