UPA809T Datasheet, PDF (1/10 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA809T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC5193)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
µPA809T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA809T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
6
5
4
Q1
Q2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
1
2
3
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
9
6
2
100
150 in 1 element
200 in 2 elements^Note
150
–65 to +150
Note 110 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1) 5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3643
(O.D. No. ID-9150)
Date Published April 1995 P
Printed in Japan
©
1995