UPA803T Datasheet, PDF (1/8 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA803T
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
µPA803T has built-in 2 transistors which were developed for UHF.
FEATURES
• High fT
fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Small Collector Capacitance
Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2 × 2SC4570)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
µPA803T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA803T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
6
5
4
Q1
Q2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
1
2
3
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
20
12
3
30
120 in 1 element
160 in 2 elements^Note
125
–55 to +125
Note 90 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
The information in this document is subject to change without notice.
Document No. ID-3637
(O.D. No. ID-9144)
Date Published April 1995 P
Printed in Japan
©
1995