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UPA800T Datasheet, PDF (1/6 Pages) NEC – HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA800T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA800T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• High Gain
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4228)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
PACKING STYLE
µPA800T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA800T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
20
10
1.5
35
150 in 1 element
200 in 2 elementsNote
150
–65 to +150
Note 110 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONFIGURATION (Top View)
6
5
4
Q1
Q2
1
2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1) 5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
The information in this document is subject to change without notice.
Document No. ID-3634
(O.D. No. ID-9141)
Date Published April 1995 P
Printed in Japan
©
1995