UPA675T Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA675T
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The µ PA675T is an N-channel vertical MOS FET. Because it
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Two MOS FET circuits in package the same size as SC-70
• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there’s no need to
consider a drive current
• Since bias resistance can be omitted, the number of
components required can be reduced
ORDERING INFORMATION
PART NUMBER
µ PA675T ^Note
Note Marking: SA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse) ^Note
ID(DC)
±0.1
A
ID(pulse)
±0.2
A
Total Power Dissipation (TC = 25°C)
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
6
5
4
1
2
3
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
PIN CONNECTION
6
5
4
1. Source 1 (S1)
2. Gate 1 (G1)
3. Drain 2 (D2)
4. Source 2 (S2)
5. Gate 2 (G2)
6. Drain 1 (D1)
1
2
3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15454EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
©
Printed in Japan
2001