UPA651TT Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA651TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA651TT is a switching device, which can be driven directly by a
1.8 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
RDS(on)2 = 88 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)
RDS(on)3 = 142 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)
PACKAGE DRAWING (Unit: mm)
2.0±0.2
6
54
1
2
3
0~0.05
0.65
0.65
S
MAX. 0.8
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA651TT
6pinWSOF (1620)
Marking: WE
0.05 S
1,2,5,6 : Drain
3
: Gate
4
: Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
VGSS
m8.0
V
ID(DC)
m5.0
A
ID(pulse)
m20
A
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TA = 25°C) ^Note2
PT2
0.2
W
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
0.2
+0.1
−0.05
0.1 M S
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16203EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
©
Printed in Japan
2002