UPA611TA Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ^PA611TA
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The µPA611TA is a switching device which can be driven directly by a
2.5-V power source.
The µPA611TA has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
PACKAGE DRAWING (Unit : mm)
0.32 +0.1
–0.05
0.16 +0.1
–0.06
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.8
1.1 to 1.4
ORDERING INFORMATION
PART NUMBER
µPA611TA
PACKAGE
SC-74 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±0.1
A
ID(pulse)
±0.4
A
Total Power Dissipation
PT 300 (TOTAL) mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Gate
Internal
Diode
Gate
Protection
Diode
Source
PIN CONNECTION (Top View)
654
123
Marking : IB
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11707EJ1V0DS00 (1st edition)
©
Date Published August 1999 NS CP(K)
Printed in Japan
1999