UPA610TA Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA610TA
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The µPA610TA is a switching device which can be driven
directly by a 2.5 V power source.
The µPA610TA has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5 V power source.
• Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS
–30
V
Gate to Source Voltage
VGSS
+20
V
Drain Current (DC)
ID(DC)
+0.1
A
Drain Current (pulse)
ID(pulse)
+0.4 ^Note
A
Total Power Dissipation PT
300 (TOTAL) mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Package Drawings (unit: mm)
0.32 +0.1
–0.05
0.16 +0.1
–0.06
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
Equivalent Circuit
Drain
Gate
Internal Diode
Gate Protect
Diode
Source
Pin Connection (Top View)
654
123
Marking : JB
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
6. Drain 1
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11199EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
©
1996