UPA603T Datasheet, PDF (1/6 Pages) NEC – P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA603T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
The µPA603T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
FEATURES
• Two MOS FET circuits in package the same size as
SC-59
• Complement to µPA602T
• Automatic mounting supported
PACKAGE DIMENSIONS (in millimeters)
0.32
+0.1
–0.05
0.16
+0.1
–0.06
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.8
1.1 to 1.4
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL RATINGS
Drain to Source Voltage
VDSS
–50
Gate to Source Voltage
VGSS
+16
Drain Current (DC)
ID(DC)
–100
Drain Current (pulse)
ID(pulse)*
–200
Total Power Dissipation
PT
300 (Total)
Channel Temperature
Tch
150
Storage Temperature
Tstg
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
* PW ≤ 10 ms, Dury Cycle ≤ 50 %
Document No. G11250EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996