UPA573T Datasheet, PDF (1/6 Pages) NEC – P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA573T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
FOR SWITCHING
The µPA573T is a super-mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
FEATURES
• Two source common MOS FET circuits in package the
same size as SC-70
• Directly driven by ICs having a 3 V power supply
• Automatic mounting supported
PACKAGE DIMENSIONS (in millimeters)
0.2
+0.1
–0
0.15
+0.1
–0.05
0 to 0.1
0.65 0.65
1.3
2.0 ±0.2
0.7
0.9 ±0.1
EQUIVALENT CIRCUIT
5
4
1
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Voltage
VDSS
VGS = 0
Gate to Source Voltage
VGSS
VDS = 0
Drain Current (DC)
ID(DC)
Drain Current (pulse)
ID(pulse)
PW ≤ 10 ms, Duty Cycle ≤ 50 %
Total Power Dissipation
PT
Channel Temperature
Tch
Operating Temperature
Topt
Storage Temperature
Tstg
PIN CONNECTION
1. Gate 1 (G1)
2. Source (common)
3. Gate 2 (G2)
4. Drain 2 (D2)
5. Drain 1 (D1)
Marking: CB
3
RATINGS
–30
+7
+100
+200
200 (Total)
150
–55 to +80
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
˚C
Document No. G11245EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996