UPA503T Datasheet, PDF (1/6 Pages) NEC – P-CHANNEL MOSFET (5-PIN 2 CIRCUITS)

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA503T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The µPA503T is a mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
FEATURES
• Two source common MOS FET circuits in package
the same size as SC-59
• Complement to µPA502T
• Automatic mounting supported
PACKAGE DIMENSIONS
(in millimeters)
0.32
+0.1
–0.05
0.16
+0.1
–0.06
0.95 0.95
1.9
2.9 ± 0.2
0 to 0.1
0.8
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL RATINGS
Drain to Source Voltage
VDSS
–50
Gate to Source Voltage
VGSS
+16
Drain Current (DC)
ID(DC)
–100
Drain Current (pulse)
ID(pulse)*
–200
Total Power Dissipation
PT
300 (TOTAL)
Channel Temperature
Tch
150
Storage Temperature
Tstg
–55 to +150
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
UNIT
V
V
mA
mA
mW
˚C
˚C
PIN CONNECTION
(Top view)
Document No. G11239EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996