UPA2780GR Datasheet, PDF (1/6 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2780GR
SWITCHING
N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2780GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter
application.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
• Built a Schottky Barrier Diode
• Low on-state resistance
RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A)
RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A)
RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A)
• Low Ciss: Ciss = 1200 pF TYP.
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2780GR
PACKAGE
Power SOP8
1
4
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) [MOSFET]
Drain Current (pulse) ^Note1
Average Forward Current ^Note2 [SCHOTTKY]
Total Power Dissipation ^Note3 [MOSFET]
Total Power Dissipation ^Note3 [SCHOTTKY]
VGSS
±20
V
ID(DC)
±14
A
ID(pulse)
±56
A
IF(AV)
2.5
A
PT
2
W
PT
1
W
Channel & Junction Temperature
Tch, Tj
150
°C
Storage Temperature
Tstg −55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Rectangle wave, 50% Duty Cycle
3. Mounted on ceramic substrate of 1200 mm² x 2.2 mm
Drain
Gate
Gate
Protection
Diode
Source
Schottky
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16419EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002