UPA2756GR Datasheet, PDF (1/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
• Low Ciss: Ciss = 260 pF TYP.
• Built-in G-S protection diode against ESD
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2756GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
8
5
1
4
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) ^Note1
ID(DC)
±4.0
A
Drain Current (pulse) ^Note2
ID(pulse)
±16
A
Total Power Dissipation (1 unit) ^Note1
PT1
1.6
W
Total Power Dissipation (2 units) ^Note1
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Repetitive Avalanche Energy ^Note4
Tstg
−55 to +150 °C
IAS
4.0
A
EAS
1.6
mJ
EAR
1.6
mJ
EQUIVALENT CIRCUIT
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection _{Source 1}
Diode
Gate
Protection _{Source 2}
Diode
Notes 1. Mounted on ceramic substrate of 2000 mm² x 2.2 mm
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
4. IAR ≤ 4.0 A, Tch ≤ 150°C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005