UPA2750GR Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2750GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2750GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
application of notebook computers.
FEATURES
• Dual chip type
• Low on-state resistance
RDS(on)1 = 15.5 mΩ MAX. (VGS = 10 V, ID = 4.5 A)
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 4.5 A)
RDS(on)3 = 23.9 mΩ MAX. (VGS = 4.0 V, ID = 4.5 A)
• Low Ciss: Ciss = 1040 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µPA2750GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
8
5
1
4
5.37 Max.
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (1 unit) ^Note2
Total Power Dissipation (2 unit) ^Note2
ID(DC)
±9.0
A
ID(pulse)
±36
A
PT
1.7
W
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg –55 to +150 °C
IAS
9.0
A
EAS
8.1
mJ
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. TA = 25°C, Mounted on ceramic substrate of 2000 mm² x 2.2 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15780EJ1V0DS00 (1st edition)
©
Date Published March 2002 NS CP(K)
Printed in Japan
2001