UPA2708GR Datasheet, PDF (1/7 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2708GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2708GR is N-channel MOS Field Effect
Transistor designed for DC/DC converter and power
management applications of notebook computer.
FEATURES
• Low on-state resistance
RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2708GR-E1
Power SOP8
µ PA2708GR-E2
µ PA2708GR-E1-A ^Note
µ PA2708GR-E2-A ^Note
Power SOP8
Power SOP8
Power SOP8
Note Pb-free (This product does not contain Pb in
external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±17
A
Drain Current (pulse) ^Note1
ID(pulse)
±68
A
Total Power Dissipation ^Note2
PT1
1.1
W
Total Power Dissipation (PW =10 sec) ^Note2
PT2
2.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
−55 to +150
°C
IAS
17
A
EAS
28.9
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Ambient ^Note
Channel to Drain Lead ^Note
Rth(ch-A)
Rth(ch-L)
114
30
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17033EJ1V0DS00 (1st edition)
Date Published May 2005 CP(K)
Printed in Japan
2004