UPA2702TP Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2702TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2702TP, which has a heat spreader, is N-Channel
MOS Field Effect Transistor designed for DC/DC converter and
power management applications of notebook computers.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: Ciss = 900 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
1
4
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
1
4
0.12 M
0.10 S
ORDERING INFORMATION
PART NUMBER
µPA2702TP
PACKAGE
Power HSOP8
2.0 ±0.2
9
4.1 MAX.
8
5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) (TA = 25°C) ^Note1
Drain Current (pulse) ^Note2
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ^Note1
VGSS
±20
V
ID(DC)1
±35
A
ID(DC)2
±14
A
ID(pulse)
±65
A
PT1
22
W
PT2
3
W
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Channel Temperature
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tch
150
°C
Tstg –55 to +150 °C
IAS
16
A
EAS
25.6
mJ
Gate
Protection
Diode
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
5
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15845EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published May 2002 NS CP(K)
Printed in Japan
2002