UPA2700TP Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2700TP
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2700TP which has a heat spreader is N-Channel
MOS Field Effect Transistor designed for DC/DC converter
and power management application of notebook computer.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8, 9 ; Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER
µPA2700TP
PACKAGE
Power HSOP8
1
4
5.2
+0.17
–0.2
0.8 ±0.2
S
6.0 ±0.3
4.4 ±0.15
1.27 TYP.
0.40
+0.10
–0.05
1
4
0.12 M
2.0 ±0.2
9
4.1 MAX.
8
5
0.10 S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, All terminals are connected.)
5 Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (DC) (TA = 25°C) ^Note1
Drain Current (pulse) ^Note2
VGSS
±20
V
ID(DC)1
±42
A
ID(DC)2
±20
A
ID(pulse)
±120
A
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) ^Note1
PT1
37
W
PT2
3
W
Gate
Body
Diode
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg –55 to + 150 °C
IAS
22
A
EAS
48.4
mJ
Source
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15851EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published May 2002 NS CP(K)
Printed in Japan
2002