UPA2451 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2451
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA2451 is a switching device which can be driven
directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
PACKAGE DRAWING (Unit : mm)
1
6
2
5
3
4
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 20 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)2 = 21 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
RDS(on)3 = 25 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A)
RDS(on)4 = 32 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD
4.4±0.1
5.0±0.1
7
(0.9)
ORDERING INFORMATION
PART NUMBER
µPA2451TL
PACKAGE
6PIN HWSON (4521)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
30
V
Gate to Source Voltage (VDS = 0 V) VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±8.2
A
Drain Current (pulse) ^Note1
ID(pulse)
±80
A
Total Power Dissipation (2unit) ^Note2 PT1
2.5
W
Total Power Dissipation (2unit) ^Note3 PT2
0.7
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. TA = 25°C Mounted on ceramic board
3. TA = 25°C Mounted on FR4 board
(0.15)
(3.05)
(0.50)
1,2: Source 1
3: Gate 1
7: Drain
5,6: Source 2
4: Gate 2
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15621EJ1V0DS00 (1st edition)
Date Published March 2002 NS CP(K)
©
Printed in Japan
2001