UPA1970 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1970
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA1970 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A)
RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A)
RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)
ORDERING INFORMATION
PART NUMBER
µ PA1970TE ^Note
PACKAGE
SC-95 (Mini Mold Thin Type)
Note Marking: TT
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.16^{+–00..016}
6
5
4
1
2
3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
6: Drain 1
1: Gate 1
5: Source 1
4: Drain 2
3: Gate 2
2: Source 2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±2.2
A
Drain Current (pulse) ^Note1
ID(pulse)
±8.8
A
Total Power Dissipation (2 units) (TA = 25°C)^Note2 PT1
1.15
W
Total Power Dissipation (1 unit) (TA = 25°C)^Note2
PT2
0.57
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUITS
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection
Diode
Source 1
Gate
Protection
Diode
Source 2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 5000 mm² x 1.1 mm, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15934EJ1V0DS00 (1st edition)
©
Date Published September 2002 NS CP(K)
Printed in Japan
2001