UPA1952 Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1952
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA1952 is a switching device, which can be driven
directly by a 1.8 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A)
RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1952TE
SC-95 (Mini Mold Thin Type)
Marking: TP
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.16^{+–00..016}
6
5
4
1
2
3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
6: Drain 1
1: Gate 1
5: Source 1
4: Drain 2
3: Gate 2
2: Source 2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation (2 units) ^Note2
Total Power Dissipation (1 unit) ^Note2
ID(DC)
m2.0
A
ID(pulse)
m8.0
A
PT1
1.15
W
PT2
0.57
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
EQUIVALENT CIRCUITS
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection
Diode
Source 1
Gate
Protection
Diode
Source 2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 5000 mm² x 1.1 mm, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15933EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2001