UPA1950 Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1950
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1950 is a switching device which can be driven
directly by a 1.8 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 130 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 176 mΩ MAX. (VGS = –3.0 V, ID = –1.5 A)
RDS(on)3 = 205 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)4 = 375 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)
ORDERING INFORMATION
PART NUMBER
µPA1950TE^Note
PACKAGE
SC-95 (Mini Mold Thin Type)
Note Marking: TM
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16^{+–00..016}
6
5
4
1
2
3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
6: Drain1 4: Drain2
1: Gate1 3: Gate2
5: Source1 2: Source2
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–12
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
Total Power Dissipation (2unit) ^Note2
Total Power Dissipation (1unit) ^Note2
VGSS
m8.0
V
ID(DC)
m2.5
A
ID(pulse)
m7.0
A
PT1
1.15
W
PT2
0.57
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection
Diode
Source 1
Gate
Protection
Diode
Source 2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15620EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2001