UPA1914 Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ ^PA1914
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1914 is a switching device which can be driven
directly by a 4 V power source.
The µPA1914 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 57 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 86 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 96 mΩ MAX. (VGS = –4.0 V, ID = –2.5A)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16^{+–00..016}
6
5
4
1
2
3
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1914TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±4.5
A
ID(pulse)
±18
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TF
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13810EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
©
Printed in Japan
1998, 1999