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UPA1911A Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1911A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1911A is a switching device which can be driven
directly by a 2.5 V power source.
The µPA1911A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5 V power source
• Low on-state resistance
RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
6
5
4
1
2
3
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
µPA1911ATENote
Note Marking: TK
PACKAGE
SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 12
V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
# 2.5
A
ID(pulse)
# 10
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation (TA = 25°C) Note2
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15044EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)
Printed in Japan
©
2001