UPA1890 Datasheet, PDF (1/12 Pages) NEC – N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ^PA1890
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1890 is a switching device which can be driven directly
by a 4.0-V power source.
The µPA1890 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
N-Channel RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 37 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)3 = 47 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
P-Channel RDS(on)1 = 37 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 64 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1890GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
N-Channel / P-Channel
Drain to Source Voltage
VDSS
30/–30
V
Gate to Source Voltage
VGSS
±20/ # 20
V
Drain Current (DC)
ID(DC)
±6.0/ # 5.0
A
Drain Current (pulse) ^Note1
ID(pulse)
±24/ # 20
A
Total Power Dissipation ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm² x 1.1 mm
PACKAGE DRAWING (Unit : mm)
8
5
1 :Drain1
2, 3 :Source1
4 :Gate1
1.2 MAX.
1.0±0.05
5 :Gate2
6, 7 :Source2
0.25
8 :Drain2
1
4
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65 0.8 MAX.
0.1
0.27
+0.03
–0.08
0.10 M
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection _Source1
Diode
Gate
Protection _Source2
Diode
N-Channel
P-Channel
To keep good radiate condition,
it is recommended that all pins
are soldering to print board.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14762EJ1V0DS00 (1st edition)
©
Date Published March 2000 NS CP(K)
Printed in Japan
2000