UPA1870 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1870
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1870 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1870 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 20.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 21.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 27.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
8
5
1 :Drain1
2, 3 :Source1
1.2 MAX.
4 :Gate1
1.0±0.05
5 :Gate2
6, 7 :Source2
0.25
8 :Drain2
1
4
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1870GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.1
0.27
+0.03
–0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
Drain Current (pulse) ^{Note 1}
Total Power Dissipation ^{Note 2}
ID(DC)
ID(pulse)
PT
±6.0
A
±80
A
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 50 cm² x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14886EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
2000