UPA1855 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1855
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1855 is a switching device which can be
driven directly by a 2.5 V power source.
The µPA1855 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• Can be driven by a 2.5 V power source
• Low on-state resistance
RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 29 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKAGE DRAWING (Unit : mm)
8
5
1 :Drain1
2, 3 :Source1
4 :Gate1
1.2 MAX.
1.0±0.05
5 :Gate2
6, 7 :Source2
0.25
8 :Drain2
1
4
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
µPA1855GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
0.27
+0.03
–0.08
0.10 M
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID(DC)
±6.0
A
Drain Current (pulse) ^Note1
ID(pulse)
±24
A
Total Power Dissipation ^Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm² x 1.1 mm
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection
Diode
Source1
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13454EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1998, 1999